feb.1999 mitsubishi thyristor modules tm90rz/ez-m,-h high power general use insulated type outline drawing & circuit diagram dimensions in mm application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers tm90rz/ez-m,-h ? i t (av) average on-state current ............ 90a ? i f (av) average forward current ............ 90a ? v rrm repetitive peak reverse voltage ........ 400/800v ? v drm repetitive peak off-state voltage ........ 400/800v ? mix double arms ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 93.5 80 17.5 20 20 3?5 2 f 6.5 26 12.5 k1 g1 tab#110, t=0.5 30 21 6.5 9 (rz) a 1 k 2 cr k 1 k 1 g 1 a 2 (ez) a 1 cr k 1 k 2 k 1 g 1 sr a 2 sr label
feb.1999 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm90rz/ez-m,-h high power general use insulated type m 400 480 320 400 480 320 h 800 960 640 800 960 640 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c v nm kgcm nm kgcm g conditions single-phase, half-wave 180 conduction, t c =86 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =125 c charged part to case main terminal screw m5 mounting screw m6 typical value ratings 140 90 1800 1.4 10 4 100 5.0 0.5 10 5.0 2.0 C40~125 C40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 symbol i t (rms) , i f (rms) i t (av) , i f (av) i tsm , i fsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms current average current surge (non-repetitive) current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm , v fm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current forward voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =i fm =270a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) measured with a 500v megohmmeter between main terminal and case min. 500 0.25 15 10 typ. max. 15 15 1.3 3.0 100 0.3 0.2 note: items of the above table applies to the thyristor part and the diode part as circled in the following tables.
feb.1999 mitsubishi thyristor modules tm90rz/ez-m,-h high power general use insulated type maximum ratings item thyristor diode v rrm v rsm v r (dc) v drm v dsm v d (dc) i t (rms) i f (rms) i t (av) i f (av) i tsm i fsm i 2 t di/dt item thyristor diode p gm pg (av) v fgm i fgm t j t stg electrical characteristics item thyristor diode i rrm i drm dv/dt v gt v gd v tm v fm i gt r th (j-c) performance curves maximum forward characteristic rated surge (non-repetitive) current gate characteristics maximum transient thermal impedance (junction to case) current (a) gate voltage (v) surge (non-repetitive) current (a) transient thermal impedance ( c/w) conduction time (cycle at 60hz) forward voltage (v) gate current (ma) time (s) r th (c-f) ? 10 ? 10 ? 10 0 10 0 10 1 10 1 10 0 10 4 10 3 10 2 10 1 10 ? 10 3 10 2 10 1 10 0 10 70 50 30 20 7 5 3 2 0 400 2000 800 1200 1600 10 1 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =3.0v i gt = 100ma i fgm =2.0a p gm =5.0w v fgm =10v v gd =0.25v p g(av) = 0.50w t j =25? 0.4 7 5 3 2 7 5 3 2 7 5 3 2 0.8 1.2 2.0 2.4 1.6 t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0 7 5 3 2 0.05 0.10 0.15 0.20 0.25 0.30 0.35
feb.1999 maximum average power dissipation (single phase halfwave) limiting value of the average current (single phase halfwave) average power dissipation (w) average current (a) average current (a) maximum average power dissipation (rectangular wave) limiting value of the average current (rectangular wave) average current (a) average current (a) limiting value of the rms current (reverse-parallel connection, three-phase three-line connection) maximum average power dissipation (reverse-parallel connection, three-phase three-line connection) average power dissipation (w) rms current (a) rms current (a) average power dissipation (w) case temperature ( c) case temperature ( c) case temperature ( c) mitsubishi thyristor modules tm90rz/ez-m,-h high power general use insulated type resistive, inductive load per single module resistive, inductive load per single element 0 0 160 20 160 80 40 60 20 40 60 80 100 120 140 100 120 140 q 360 q =30 60 270 dc 180 120 90 0 0 200 40 200 80 120 160 40 80 120 160 q =180 60 90 30 q 360 q 120 80 0 200 40 130 80 120 160 90 100 110 120 q 360 q q =30 60 90 120 180 130 50 60 70 80 90 100 110 120 0 160 20 80 40 60 100 120 140 q =30 60 dc 270 q 360 180 90 120 resistive, inductive load per single module 0 0 100 80 160 20 40 60 80 100 120 140 20 40 60 q =30 120 90 180 q 360 60 130 50 0 60 100 20 60 70 80 90 100 110 120 40 80 q =30 60 90 q 360 120 180 resistive, inductive load per single module resistive, inductive load per single element resistive, inductive load per single element resistive, inductive load per single element resistive, inductive load per single element resistive, inductive load per single module resistive, inductive load per single module resistive, inductive load per single module
feb.1999 case temperature ( c) (per single module) power dissipation (w) (per single module) maximum power dissipation (single phase fullwave rectified) limiting value of the dc output current (single phase fullwave rectified) dc output current (a) (per two modules) dc output current (a) (per two modules) mitsubishi thyristor modules tm90rz/ez-m,-h high power general use insulated type case temperature ( c) (per single module) power dissipation (w) (per single module) maximum power dissipation (three-phase fullwave rectified) limiting value of the dc output current (three-phase fullwave rectified) dc output current (a) (per three modules) dc output current (a) (per three modules) 0 0 320 160 80 200 240 40 280 120 200 40 80 120 160 q =30 60 120 90 q 360 50 0 320 160 80 130 240 60 40 280 120 200 70 80 90 100 110 120 90 q =30 60 q 360 120 0 0 200 320 280 240 200 160 120 80 40 120 40 80 160 q =30 60 120 90 180 q 360 q 130 80 0 200 40 120 80 160 90 100 110 120 120 q 360 q q =30 60 180 90 resistive, inductive load resistive, inductive load resistive, inductive load resistive, inductive load
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